Engineers at Infineon Technologies (Munich, Germany) have successfully tested an advanced memory buffer (AMB) test chip for next-generation server modules using DDR2 DRAM.
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The CellularRAM co-development group includes Cypress, Qimonda, Renesas, Micron Technology, Hynix, NanoAmp, and Windbond Electronics.
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The 4-Gbyte THNCF4G09PG and 2-Gbyte THNCF2G04PG CompactFlash cards use advanced 90-nm multilevel-cell NAND flash memory technology.
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The AMB advanced memory buffer IC enables the use of high-speed and high-capacity FB–DIMM memory modules required by applications such as high-end servers and routers.
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The SN74AVCA406 is a transceiver for interfacing microprocessors with MultiMediaCards (MMCs), secure digital (SD) cards, Memory Stick compliant products, SmartMedia cards, or xD-Picture Cards. It...
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The M50FLW080 8-Mbit flash memory is intended for storage of BIOS code in PCs with both Intel and non-Intel chipsets and supports both firmware hub (FWH) and low-pin-count (LPC) architectures.
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Micron Flash memory offers high-performance features, including a READ CACHE function that streams more than 30MB per second. See the NAND product tables and support pages for more details.
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The WV3HG series 512-Mbyte and 1-Gbyte DDR2 registered SDRAM DIMMs feature a board height of 0.720 in.--ideal for low-height blade servers and network switching applications.
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Elpida Memory completed the development of next-generation 512Mb DDR3 SDRAM for computing applications such as notebooks, desktop PCs and servers in August, 2005. The new DDR3 architecture features...
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Toshiba has consistently led the way in developing non-volatile memory solutions for the consumer market, beginning as the MLC NAND principal innovator of NAND- and NOR- type Flash memory in the...
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